Gernanium dioxide for next generation power semiconductor material Patentix
- Motor
- Energy Efficient Technology
- Factory Automation
- Power Supply Parts
- Battery
- Next-generation Charging System
- Power conversion
- Capacitor
- Switching Power Supply
- High Voltage Power Supply
- Un-Interrupting Power Source (UPS)
- Semiconductor
- Automotive
- Industrial Machinery
- Circuit
- Device
- Data Space
- Hydrogen production, storage and transportation
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Target Sector (English)
・Mitsubishi
・MinebeaMitsumi
・Toshiba
・Fuji Electric
・Shindengen
・Sanken
・SanRex
・Rohm
・Infinion
・STMicro
・Onsemi
・Alfa＆Omega
・ -
Use Scenes (English)
・SMPS
・Pulse Power supply
・Train
・EV
・Data Center
・Space
・Industrial Power supply
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Sales point (English)
・Bandgap→4.7eV(measured)
・Baliga FOM→>10times than SiC
・PN contuction→✔
・ON resistance→1/10digit than SiC
・Wafer type→GeO2 on Si
・Wafer Size→６inch
・Vickers hardness→1610Hv
・Young’s modulus→293GPa
・Cost→✔
・Thermal conductivity→0.51W/cmk
| Size / capacity (English) | r-Germanium dioxide has wider bandgap than SiC and its Balica figure of merit is expected more than 10 times bigger than SiC. Theoretically, it has both N type semiconductor and P type semiconductor.Our first wafer is supposed to be GeO2 on Si. This can offer better performance with cheaper cost than SiC.GeO2 can be the most likely candidate for the next generation power semiconductor material. |
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| Notices (English) | ・Availabe with 10mm x 10mm GeOn on TiO2 small wafer soon |
| Catalog PDF file |
Patentix
https://www.patentix.co.jp- Japan exhibitors
- Real
- TECHNO-FRONTIER 2026
- POWER ELECTRONICS JAPAN
- Booth number 1-P29